SIR383
Typical Electro-Optical Characteristics Curves
Fig.5 Relative Intensity vs.
Forward Current
Fig.6 Relative Radiant Intensity vs.
Angular Displacement
1000
-20
-10
0
10
20
30
100
10
1.0
0.9
0.8
0.7
40
50
60
70
80
10
0
0
1
10
2
10
10
3
10 4
0.6 0.4 0.2
0
0.2 0.4 0.6
I F -Forward Current (mA )
Fig.7 Relative Intensity vs.
Ambient Temperature( ° C)
45
Fig.8 Forward Voltage vs.
Ambient Temperature( ° C)
1.4
30
15
0
I F =20mA
1.3
1.2
1.1
I F =20mA
25
50
75
100
120
25
50
75
100
120
Everlight Electronics Co., Ltd.
http:\\www.everlight.com
Rev 1
Page: 5 of 7
Device No : CDIS-038-001
Prepared date : 2006/7/21
Prepared by : wangyinsheng
相关PDF资料
SIR404DP-T1-GE3 MOSFET N-CH D-S 20V 8-SOIC
SIR406DP-T1-GE3 MOSFET N-CH D-S 25V PPAK 8SOIC
SIR414DP-T1-GE3 MOSFET N-CH D-S 40V 8-SOIC
SIR418DP-T1-GE3 MOSFET N-CH D-S 40V PPAK 8SOIC
SIR436DP-T1-GE3 MOSFET N-CH D-S 25V PPAK 8SOIC
SIR440DP-T1-GE3 MOSFET N-CH 20V 60A PPAK 8SOIC
SIR462DP-T1-GE3 MOSFET N-CH 30V 30A PPAK 8SOIC
SIR464DP-T1-GE3 MOSFET N-CH 30V 50A PPAK 8SOIC
相关代理商/技术参数
SIR383C 功能描述:红外发射源 Infrared LED RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk
SIR-38EH 制造商:Russell 功能描述:
SIR401DP-T1-GE3 功能描述:MOSFET -20V 3.2mOhm@10V 50A P-Ch G-III RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIR402DP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET
SIR402DP_09 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET
SiR402DP-T1-E3 制造商:Vishay Siliconix 功能描述:MOSFET N SO-8 制造商:Vishay Siliconix 功能描述:MOSFET, N, SO-8 制造商:Vishay Intertechnologies 功能描述:MOSFET, N, SO-8, Transistor Polarity:N Channel, Continuous Drain Current Id:35A, 制造商:Vishay Siliconix 功能描述:MOSFET, N, SO-8, Transistor Polarity:N Channel, Continuous Drain Current Id:35A, Drain Source Voltage Vds:30V, On Resistance Rds(on):6mohm, Rds(on) Test Voltage Vgs:10V, Power Dissipation Pd:4.2W, Operating Temperature Range:-55C to, RoHS Compliant: Yes
SIR402DP-T1-GE3 功能描述:MOSFET 30V 35A 36W 6.0mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIR403EDP-T1-GE3 制造商:Vishay Semiconductors 功能描述:MOSFETS - Tape and Reel 制造商:Vishay Siliconix 功能描述:MOSFET P-CH 30V 40A SO08 制造商:Vishay Intertechnologies 功能描述:P-CHANNEL 30-V (D-S) MOSFET